In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

Tien Yu Chu, Hsien Wen  Wan, Yi Ting  Cheng, Chao Kai  Cheng , Yu Jie  Hong, Jueinai  Kwo, Minghwei Hong Hong

doi:https://doi.org/10.7567/SSDM.2021.A-4-07

12:13 PM - 12:20 PM

[A-4-07] In-situ Deposited HfO₂and Y₂O₃ on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

〇Tien Yu Chu¹, Hsien Wen Wan¹, Yi Ting Cheng¹, Chao Kai Cheng ¹, Yu Jie Hong¹, Jueinai Kwo², Minghwei Hong Hong¹ (1.Granduate Institute of Applied Physics and Department of Physics, National Taiwan Univ., Taipei 10617, 2.Department of Physics, National Tsing Hua Univ., Hsinchu 30013)

https://doi.org/10.7567/SSDM.2021.A-4-07

2021 International Conference on Solid State Devices and Materials

[A-4-07] In-situ Deposited HfO2 and Y2O3 on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

[A-4-07] In-situ Deposited HfO₂and Y₂O₃ on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties