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[A-5-01] Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

〇Cheng-Hung Wu¹, Kuan-Chi Wang¹, Yu-Yun Wang¹, Tian-Li Wu¹, Chun-Jung Su², Yao-Jen Lee², Chenming Hu^1,3 (1.National Yang Ming Chiao Tung Univ., 2.Taiwan Semiconductor Research Inst., 3.Univ. California, Berkeley )

https://doi.org/10.7567/SSDM.2021.A-5-01