Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

Cheng-Hung Wu

doi:https://doi.org/10.7567/SSDM.2021.A-5-01

14:00 〜 14:07

[A-5-01] Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

〇Cheng-Hung Wu¹、Kuan-Chi Wang¹、Yu-Yun Wang¹、Tian-Li Wu¹、Chun-Jung Su²、Yao-Jen Lee²、Chenming Hu^1,3 (1.National Yang Ming Chiao Tung Univ.、2.Taiwan Semiconductor Research Inst.、3.Univ. California, Berkeley )

https://doi.org/10.7567/SSDM.2021.A-5-01

2021 International Conference on Solid State Devices and Materials

[A-5-01] Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode