Contactless Characterization of SiO<sub>x</sub>/c-Si by FTIR and μ-PCD applied to pMOS Devices

Mickael Lozach

doi:https://doi.org/10.7567/SSDM.2021.A-6-10

17:11 〜 17:18

[A-6-10] Contactless Characterization of SiO_x/c-Si by FTIR and μ-PCD applied to pMOS Devices

〇Mickael Lozach¹、Sommawan Khumpuang^1,2、Shiro Hara^1,2 (1.Minimal Fab Promoting Organization、2.National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2021.A-6-10

2021 International Conference on Solid State Devices and Materials

[A-6-10] Contactless Characterization of SiOx/c-Si by FTIR and μ-PCD applied to pMOS Devices

[A-6-10] Contactless Characterization of SiO_x/c-Si by FTIR and μ-PCD applied to pMOS Devices