Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

09:44 〜 09:51

[A-7-04] Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

〇Zihao Liu¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Inst. of Indus. Sci., The Univ. of Tokyo)