Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment

Tsung-En Lee

doi:https://doi.org/10.7567/SSDM.2021.A-7-05

09:51 〜 09:58

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment

〇Tsung-En Lee¹、Shao-Tse Huang²、Chiung-Yi Yang²、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Yao-Jen Lee²、Shinichi Takagi¹ (1.Univ. of Tokyo、2.Taiwan Semiconductor Res. Inst.)

https://doi.org/10.7567/SSDM.2021.A-7-05

2021 International Conference on Solid State Devices and Materials

[A-7-05] Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment