Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment

Tsung-En Lee, Shao-Tse Huang, Chiung-Yi Yang, Kasidit Toprasertpong, Mitsuru Takenaka, Yao-Jen Lee, Shinichi Takagi

doi:https://doi.org/10.7567/SSDM.2021.A-7-05

9:51 AM - 9:58 AM

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment

〇Tsung-En Lee¹, Shao-Tse Huang², Chiung-Yi Yang², Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Yao-Jen Lee², Shinichi Takagi¹ (1.Univ. of Tokyo, 2.Taiwan Semiconductor Res. Inst.)

https://doi.org/10.7567/SSDM.2021.A-7-05

2021 International Conference on Solid State Devices and Materials

[A-7-05] Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment

[A-7-05] Improvement of performance of Si_0.8Ge_0.2/SOI p-FinFETs by ultrathin Y₂O₃ gate stacks with TMA treatment