Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

HsienWen Wan

doi:https://doi.org/10.7567/SSDM.2021.A-7-06

09:58 〜 10:05

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

〇HsienWen Wan¹、Yi-Ting Cheng¹、Chao-Kai Cheng¹、Yu-Jie Hong¹、Tien-Yu Chu¹、Chien-Ting Wu²、Jueinai Kwo³、Minghwei Hong¹ (1.National Taiwan Univ.、2.Taiwan Semiconductor Res. Inst.、3.National Tsing Hua Univ.)

https://doi.org/10.7567/SSDM.2021.A-7-06

2021 International Conference on Solid State Devices and Materials

[A-7-06] Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si