Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

HsienWen Wan, Yi-Ting Cheng, Chao-Kai Cheng, Yu-Jie Hong, Tien-Yu Chu, Chien-Ting Wu, Jueinai Kwo, Minghwei Hong

doi:https://doi.org/10.7567/SSDM.2021.A-7-06

9:58 AM - 10:05 AM

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

〇HsienWen Wan¹, Yi-Ting Cheng¹, Chao-Kai Cheng¹, Yu-Jie Hong¹, Tien-Yu Chu¹, Chien-Ting Wu², Jueinai Kwo³, Minghwei Hong¹ (1.National Taiwan Univ., 2.Taiwan Semiconductor Res. Inst., 3.National Tsing Hua Univ.)

https://doi.org/10.7567/SSDM.2021.A-7-06

2021 International Conference on Solid State Devices and Materials

[A-7-06] Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si

[A-7-06] Attainment of Low D_it and Reliable High-Ge-Content Si_1-xGe_xGate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si