10:05 〜 10:12

[A-7-07] Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer

〇Keisuke Yamamoto¹、Kento Iseri¹、Dong Wang¹、Hiroshi Nakashima¹ (1.Kyushu Univ.)

https://doi.org/10.7567/SSDM.2021.A-7-07