Computing-in-Memory Demonstration of Multiple-State (&gt;8) Analog Memory Cell with Ultra-Low (&lt;1 nA/cell) Current Enabled by Monolithic  CAAC-IGZO FET + Si CMOS FET Stack     for Highly-Efficient AI Applications

Satoru Ohshita, Hidefumi Rikimaru, Kazuki Tsuda, Hiromichi Godo, Yoshiyuki Kurokawa, Yoshinori Ando, Hiromi Sawai, Yasumasa Yamane, Shunpei Yamazaki, Toru Nakura, Hiroshi Yoshida, Kuo-Chang Huang, Miller Liao, Shou-Zen Chang

doi:https://doi.org/10.7567/SSDM.2021.A-8-01

10:45 AM - 10:52 AM

[A-8-01] Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications

〇Satoru Ohshita¹, Hidefumi Rikimaru¹, Kazuki Tsuda¹, Hiromichi Godo¹, Yoshiyuki Kurokawa¹, Yoshinori Ando¹, Hiromi Sawai¹, Yasumasa Yamane¹, Shunpei Yamazaki¹, Toru Nakura², Hiroshi Yoshida³, Kuo-Chang Huang³, Miller Liao⁴, Shou-Zen Chang³ (1.Semiconductor Energy Laboratory Co., Ltd., 2.Fukuoka Univ., 3.Powerchip Semiconductor Manufacturing Corp., 4.National Taiwan Univ.)

https://doi.org/10.7567/SSDM.2021.A-8-01

2021 International Conference on Solid State Devices and Materials

[A-8-01] Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications