16:22 〜 16:29

[B-2-03] Unipolar Switching based Antiferroelectric HfZrO₂ Diode beyond Endurance > 10¹¹ Cycles with Low Operation Voltage for FeRAM Application

〇Kuo-Yu Hsiang^1,2、C.-Y. Liao¹、Y.-Y. Lin¹、J.-H. Liu¹、S.-H. Chang¹、F.-C. Hsieh¹、S.-H. Chiang¹、H. Liang¹、C.-Y. Lin¹、Z.-F. Lou¹、T.-C. Chen³、C.-S. Chang³、M. H. Lee¹ (1.National Taiwan Normal University、2.National Yang Ming Chiao Tung University、3.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2021.B-2-03