4:22 PM - 4:29 PM

[B-2-03] Unipolar Switching based Antiferroelectric HfZrO₂ Diode beyond Endurance > 10¹¹ Cycles with Low Operation Voltage for FeRAM Application

〇Kuo-Yu Hsiang^1,2, C.-Y. Liao¹, Y.-Y. Lin¹, J.-H. Liu¹, S.-H. Chang¹, F.-C. Hsieh¹, S.-H. Chiang¹, H. Liang¹, C.-Y. Lin¹, Z.-F. Lou¹, T.-C. Chen³, C.-S. Chang³, M. H. Lee¹ (1.National Taiwan Normal University, 2.National Yang Ming Chiao Tung University, 3.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2021.B-2-03