Analysis of V<sub>T</sub> Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory

16:36 〜 16:43

[B-2-05] Analysis of V_T Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory

〇Jounghun Park¹、Gilsang Yoon¹、Donghyun Go¹、Donghwi Kim¹、Jungsik Kim²、Jeong-Soo Lee¹ (1.Pohang Univ. of Sci. and Tech.、2.Gyeongsang National Univ.)