4:36 PM - 4:43 PM

[B-2-05] Analysis of V_T Gain and Related Lateral Migration Using Program-Erase-Program Pattern in 3-D NAND Flash Memory

〇Jounghun Park¹, Gilsang Yoon¹, Donghyun Go¹, Donghwi Kim¹, Jungsik Kim², Jeong-Soo Lee¹ (1.Pohang Univ. of Sci. and Tech., 2.Gyeongsang National Univ.)

https://doi.org/10.7567/SSDM.2021.B-2-05