Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

Mohit Mohit, Shinji Migita, Hiroyuki Ota, Yukinori  Morita, Eisuke Tokumitsu

doi:https://doi.org/10.7567/SSDM.2021.B-6-05

4:36 PM - 4:43 PM

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

〇Mohit Mohit¹, Shinji Migita², Hiroyuki Ota², Yukinori Morita², Eisuke Tokumitsu ¹ (1.Japan Advanced Institute of Science and Technology , 2.National Institute of Advanced Industrial Science and Technology )

https://doi.org/10.7567/SSDM.2021.B-6-05

2021 International Conference on Solid State Devices and Materials

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O