Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

Mohit Mohit

doi:https://doi.org/10.7567/SSDM.2021.B-6-05

16:36 〜 16:43

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

〇Mohit Mohit¹、Shinji Migita²、Hiroyuki Ota²、Yukinori Morita²、Eisuke Tokumitsu ¹ (1.Japan Advanced Institute of Science and Technology 、2.National Institute of Advanced Industrial Science and Technology )

https://doi.org/10.7567/SSDM.2021.B-6-05

2021 International Conference on Solid State Devices and Materials

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O