16:43 〜 16:50

[B-6-06] High Performance Self-rectifying Ferroelectric Tunnel Junction Devices Formed by Domain Pinning Effect Attributed to Interfacial Oxygen Vacancy

〇Youngin Goh¹、Jeong Hyeon Hwang¹、Minki Kim¹、Sanghun Jeon¹ (1.KAIST)

https://doi.org/10.7567/SSDM.2021.B-6-06