4:43 PM - 4:50 PM

[B-6-06] High Performance Self-rectifying Ferroelectric Tunnel Junction Devices Formed by Domain Pinning Effect Attributed to Interfacial Oxygen Vacancy

〇Youngin Goh¹, Jeong Hyeon Hwang¹, Minki Kim¹, Sanghun Jeon¹ (1.KAIST)

https://doi.org/10.7567/SSDM.2021.B-6-06