16:50 〜 16:57

[B-6-07] Oxygen Vacancies Modulated Tunnel Junction Memristor with Improved Tunneling Electroresistance Ratio

〇Fenning Liu¹、Yue Peng¹、Genquan Han¹、Wenwu Xiao²、Yan Liu¹、Yue Hao¹ (1.Xidian Univ.、2.Xi'an UniIC Semiconductors)

https://doi.org/10.7567/SSDM.2021.B-6-07