Via-last Cu-TSV fabrication on LSI wafer using WNi as barrier/seed layer for 3D integration _ a feasibility study on WNi-CMP

11:29 〜 11:36

[C-4-04] Via-last Cu-TSV fabrication on LSI wafer using WNi as barrier/seed layer for 3D integration _ a feasibility study on WNi-CMP

〇Murugesan Mariappan¹、JC Bea¹、M Koyanagi¹、T Fukushima¹ (1.GINTI, Tohoku University)