Mapping of Contactless Photoelectrochemical Etched GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy  --- Difference in Electrolytes ---

Kenji Shiojima, Ryo Matsuda, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima

doi:https://doi.org/10.7567/SSDM.2021.C-5-05

2:51 PM - 2:58 PM

[C-5-05] Mapping of Contactless Photoelectrochemical Etched GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy --- Difference in Electrolytes ---

〇Kenji Shiojima¹, Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

https://doi.org/10.7567/SSDM.2021.C-5-05

2021 International Conference on Solid State Devices and Materials

[C-5-05] Mapping of Contactless Photoelectrochemical Etched GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy --- Difference in Electrolytes ---