4:43 PM - 4:50 PM

[C-6-06] Preparation of Zr/ZrO_x/Pt structure for forming free resistive random access memory

〇Yuki Kawai¹, Masaru Sato¹, Mayumi B. Takeyama¹ (1.Kitami Institute of Technology)

https://doi.org/10.7567/SSDM.2021.C-6-06