Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N<sub>2</sub>/NH<sub>3</sub> Thermal Treatment

Daimotsu Kato

doi:https://doi.org/10.7567/SSDM.2021.D-1-02

14:30 〜 14:37

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment

〇Daimotsu Kato¹、Yosuke Kajiwara¹、Akira Mukai¹、Hiroshi Ono¹、Aya Shindome¹、Po-Chin Huang¹、Matthew D. Smith¹、Jumpei Tajima¹、Toshiki Hikosaka¹、Masahiko Kuraguchi¹、Shinya Nunoue¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2021.D-1-02

2021 International Conference on Solid State Devices and Materials

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N2/NH3 Thermal Treatment

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment