Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N<sub>2</sub>/NH<sub>3</sub> Thermal Treatment

Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Po-Chin Huang, Matthew D. Smith, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue

doi:https://doi.org/10.7567/SSDM.2021.D-1-02

2:30 PM - 2:37 PM

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment

〇Daimotsu Kato¹, Yosuke Kajiwara¹, Akira Mukai¹, Hiroshi Ono¹, Aya Shindome¹, Po-Chin Huang¹, Matthew D. Smith¹, Jumpei Tajima¹, Toshiki Hikosaka¹, Masahiko Kuraguchi¹, Shinya Nunoue¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2021.D-1-02

2021 International Conference on Solid State Devices and Materials

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N2/NH3 Thermal Treatment

[D-1-02] Improvement of Channel Mobility in Normally-off AlN/GaN MOSFETs with N₂/NH₃ Thermal Treatment