2:37 PM - 2:44 PM

[D-1-03] HfSiO_x-gate AlGaN/GaN MOS HEMTs with improved operation stability

〇Ryota Ochi¹, Toshihide Nabatame², Tamotsu Hashizume¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.NIMS)

https://doi.org/10.7567/SSDM.2021.D-1-03