14:37 〜 14:44

[D-1-03] HfSiO_x-gate AlGaN/GaN MOS HEMTs with improved operation stability

〇Ryota Ochi¹、Toshihide Nabatame²、Tamotsu Hashizume¹、Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.、2.NIMS)

https://doi.org/10.7567/SSDM.2021.D-1-03