Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally  Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

14:44 〜 14:51

[D-1-04] Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

〇Takuma Nanjo¹、Tetsuro Hayashida¹、Tatsuro Watahiki¹、Naruhisa Miura¹ (1.Mitsubishi Electric Corp.)