Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally  Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

2:44 PM - 2:51 PM

[D-1-04] Demonstration of E-mode Operation in Planer Type MOS-HEMT Using Normally Depleted AlGaN/GaN Epitaxial Layer on Si Substrate

〇Takuma Nanjo¹, Tetsuro Hayashida¹, Tatsuro Watahiki¹, Naruhisa Miura¹ (1.Mitsubishi Electric Corp.)