“Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration

Takeru Kumabe, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano

doi:https://doi.org/10.7567/SSDM.2021.D-1-05

2:51 PM - 2:58 PM

[D-1-05] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration

〇Takeru Kumabe¹, Yuto Ando², Hirotaka Watanabe², Atsushi Tanaka^2,3, Manato Deki^1,4, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Natl. Inst. Mater. Sci., 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-1-05

2021 International Conference on Solid State Devices and Materials

[D-1-05] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration