14:51 〜 14:58

[D-1-05] “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration

〇Takeru Kumabe¹、Yuto Ando²、Hirotaka Watanabe²、Atsushi Tanaka^2,3、Manato Deki^1,4、Shugo Nitta²、Yoshio Honda²、Hiroshi Amano^2,3,4,5 (1.Grad. Sch. Eng. Nagoya Univ.、2.IMaSS Nagoya Univ.、3.Natl. Inst. Mater. Sci.、4.VBL Nagoya Univ.、5.ARC Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-1-05