Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

Takaaki Tominaga

doi:https://doi.org/10.7567/SSDM.2021.D-2-03

16:22 〜 16:29

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

〇Takaaki Tominaga^1,2、Toshiaki Iwamatsu¹、Yukiyasu Nakao¹、Hiroyuki Amishiro¹、Hiroshi Watanabe¹、Shingo Tomohisa¹、Naruhisa Miura¹、Shuhei Nakata² (1.Mitsubishi Electric Corp.、2.Kanazawa Inst. of Tech.)

https://doi.org/10.7567/SSDM.2021.D-2-03

2021 International Conference on Solid State Devices and Materials

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect