Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Shingo Tomohisa, Naruhisa Miura, Shuhei Nakata

doi:https://doi.org/10.7567/SSDM.2021.D-2-03

4:22 PM - 4:29 PM

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect

〇Takaaki Tominaga^1,2, Toshiaki Iwamatsu¹, Yukiyasu Nakao¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Shingo Tomohisa¹, Naruhisa Miura¹, Shuhei Nakata² (1.Mitsubishi Electric Corp., 2.Kanazawa Inst. of Tech.)

https://doi.org/10.7567/SSDM.2021.D-2-03

2021 International Conference on Solid State Devices and Materials

[D-2-03] Switching Loss Variation of SiC MOSFETs Owing to the Body Bias Effect