16:43 〜 16:50

[D-2-06] High Breakdown Voltage InGaAs/AlGaAs/InGaAs Superjunction Devices with Modulation-Doping for On-Resistance Reduction

Hiroaki Ogawa¹、〇Naotaka Iwata¹ (1.Toyota Technological Institute)

https://doi.org/10.7567/SSDM.2021.D-2-06