Positive threshold voltage shift of 4H-SiC MOSFET induced by Al2O3/SiO2 interface dipole layer formation

11:15 AM - 11:22 AM

[D-4-02] Positive threshold voltage shift of 4H-SiC MOSFET induced by Al₂O₃/SiO₂ interface dipole layer formation

〇Tae-Hyeon Kil¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1.The Univ. of Tokyo, 2.Mitsubishi Electric Corp.)