Positive threshold voltage shift of 4H-SiC MOSFET induced by Al2O3/SiO2 interface dipole layer formation

11:15 〜 11:22

[D-4-02] Positive threshold voltage shift of 4H-SiC MOSFET induced by Al₂O₃/SiO₂ interface dipole layer formation

〇Tae-Hyeon Kil¹、Munetaka Noguchi²、Hiroshi Watanabe²、Koji Kita¹ (1.The Univ. of Tokyo、2.Mitsubishi Electric Corp.)