Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO<sub>2</sub>/4H-SiC(11-20) Interfaces

Takato Nakanuma

doi:https://doi.org/10.7567/SSDM.2021.D-4-03

11:22 〜 11:29

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces

〇Takato Nakanuma¹、Yuu Iwakata¹、Takuji Hosoi¹、Takuma Kobayashi¹、Mitsuru Sometani²、Mitsuo Okamoto²、Takayoshi Shimura¹、Heiji Watanabe¹ (1.Osaka Univ.、2.AIST)

https://doi.org/10.7567/SSDM.2021.D-4-03

2021 International Conference on Solid State Devices and Materials

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces