Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO<sub>2</sub>/4H-SiC(11-20) Interfaces

Takato Nakanuma, Yuu Iwakata, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takayoshi Shimura, Heiji Watanabe

doi:https://doi.org/10.7567/SSDM.2021.D-4-03

11:22 AM - 11:29 AM

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces

〇Takato Nakanuma¹, Yuu Iwakata¹, Takuji Hosoi¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

https://doi.org/10.7567/SSDM.2021.D-4-03

2021 International Conference on Solid State Devices and Materials

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO2/4H-SiC(11-20) Interfaces

[D-4-03] Comprehensive Physical and Electrical Characterizations of NO Nitrided SiO₂/4H-SiC(11-20) Interfaces