11:36 〜 11:43

[D-4-05] Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO₂ interface in N₂ and N₂/H₂ ambient

〇Tianlin Yang¹、Koji Kita¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2021.D-4-05