The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

Ryota Wada

doi:https://doi.org/10.7567/SSDM.2021.D-4-06

11:43 〜 11:50

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

〇Ryota Wada¹、Tsutomu Nagayama¹、Nobuhiro Tokoro¹、Takashi Kuroi¹、Hrishikesh Das²、Swapna Sunkari²、Joshua Justice² (1.NISSIN ION EQUIPMENT CO.,LTD.、2.ON Semiconductor)

https://doi.org/10.7567/SSDM.2021.D-4-06

2021 International Conference on Solid State Devices and Materials

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles