The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

Ryota Wada, Tsutomu Nagayama, Nobuhiro Tokoro, Takashi Kuroi, Hrishikesh Das, Swapna Sunkari, Joshua Justice

doi:https://doi.org/10.7567/SSDM.2021.D-4-06

11:43 AM - 11:50 AM

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

〇Ryota Wada¹, Tsutomu Nagayama¹, Nobuhiro Tokoro¹, Takashi Kuroi¹, Hrishikesh Das², Swapna Sunkari², Joshua Justice² (1.NISSIN ION EQUIPMENT CO.,LTD., 2.ON Semiconductor)

https://doi.org/10.7567/SSDM.2021.D-4-06

2021 International Conference on Solid State Devices and Materials

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles