Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

11:50 〜 11:57

[D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

〇Takuya Fukui¹、Takeshi Tawara²、Masashi Kato¹ (1.Nagoya Institute of Technology、2.National Institute of Advanced Industrial Science and Technology)