The Japan Society of Applied Physics

11:50 AM - 11:57 AM

[D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

〇Takuya Fukui1, Takeshi Tawara2, Masashi Kato1 (1.Nagoya Institute of Technology, 2.National Institute of Advanced Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2021.D-4-07