Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

Wakana Takeuchi

doi:https://doi.org/10.7567/SSDM.2021.D-4-09

12:04 〜 12:11

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

〇Wakana Takeuchi¹、Eiji Kagoshima²、Kazushi Sumitani³、Yasuhiko Imai³、Shigehisa Shibayama⁴、Mitsuo Sakashita⁴、Shigeru Kimura³、Hidemoto Tomita²、Tsuyoshi Nishiwaki²、Hirokazu Fujiwara²、Osamu Nakatsuka⁴ (1.Aichi Inst. of Tech.、2.MIRISE Tech.、3.JASRI、4.Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-4-09

2021 International Conference on Solid State Devices and Materials

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction