16:15 〜 16:22

[D-6-02] High-temperature annealing of α- and β-Ga₂O₃ epitaxial films grown by liquid-injection MOCVD

〇Milan Tapajna¹、Filip Gucmann¹、Kristina Husekova¹、Peter Nadazdy¹、Edmund Dobrocka¹、Fridrich Egyenes-Porsok¹、Juraj Priesol²、Alexander Satka² (1.Institute of Electrical Engineering SAS、2.Institute of Electronics and Photonics, Slovak University of Technology, Faculty of Electrical Engineering and Information Technology)

https://doi.org/10.7567/SSDM.2021.D-6-02