High-temperature annealing of α- and β-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by liquid-injection MOCVD

Milan Tapajna, Filip Gucmann, Kristina Husekova, Peter Nadazdy, Edmund Dobrocka, Fridrich Egyenes-Porsok, Juraj Priesol, Alexander Satka

doi:https://doi.org/10.7567/SSDM.2021.D-6-02

4:15 PM - 4:22 PM

[D-6-02] High-temperature annealing of α- and β-Ga₂O₃ epitaxial films grown by liquid-injection MOCVD

〇Milan Tapajna¹, Filip Gucmann¹, Kristina Husekova¹, Peter Nadazdy¹, Edmund Dobrocka¹, Fridrich Egyenes-Porsok¹, Juraj Priesol², Alexander Satka² (1.Institute of Electrical Engineering SAS, 2.Institute of Electronics and Photonics, Slovak University of Technology, Faculty of Electrical Engineering and Information Technology)

https://doi.org/10.7567/SSDM.2021.D-6-02

2021 International Conference on Solid State Devices and Materials

[D-6-02] High-temperature annealing of α- and β-Ga2O3 epitaxial films grown by liquid-injection MOCVD

[D-6-02] High-temperature annealing of α- and β-Ga₂O₃ epitaxial films grown by liquid-injection MOCVD