4:29 PM - 4:36 PM

[D-6-04] DC Characteristics of the p-NiO_x/n-Ga₂O₃ Junction FETs Based on Heterointegrated Ga₂O₃-on-SiC by Ion Cutting Process

〇Haodong Hu¹, Hehe Gong², Wenhui Xu³, Yibo Wang¹, Tiangui You³, Genquan Han¹, Jiandong Ye², Xin Ou³, Yan Liu¹, Yue Hao¹ (1.Xidian University, 2.Nanjing University, 3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

https://doi.org/10.7567/SSDM.2021.D-6-04