Fixed Charge Generation in SiO<sub>2</sub>/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth

09:44 〜 09:51

[D-7-04] Fixed Charge Generation in SiO₂/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth

〇Hidetoshi Mizobata¹、Mikito Nozaki¹、Takuma Kobayashi¹、Takuji Hosoi¹、Takayoshi Shimura¹、Heiji Watanabe¹ (1.Osaka Univ.)