Fixed Charge Generation in SiO<sub>2</sub>/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth

9:44 AM - 9:51 AM

[D-7-04] Fixed Charge Generation in SiO₂/GaN MOS Structures by Forming Gas Annealing and its Suppression by Controlling Ga-oxide Interlayer Growth

〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)