Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor

09:51 〜 09:58

[D-7-05] Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor

〇Takahiro Gotow¹、Tatsushi Suka¹、Yasuyuki Miyamoto¹ (1.Tokyo Institute of Technology)